1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? low threshold voltage ? very fast switching ? trench mosfet technology 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . PMV20XN 30 v, 4.8 a n-channel trench mosfet rev. 1 ? 5 april 2011 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j =25c --30v v gs gate-source voltage -12 - 12 v i d drain current v gs =4.5v; t amb =25c [1] --4.8a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =4.8a; t j =25c - 1925m ? product specification sales@twtysemi.com 1 of 4 http://www.twtysemi.com
PMV20XN 30 v, 4.8 a n-channel trench mosfet 2. pinning information 3. ordering information 4. marking [1] % = placeholder for manufacturing site code table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 s d g mbb076 table 3. ordering information type number package name description version PMV20XN to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV20XN kw% product specification sales@twtysemi.com 2 of 4 http://www.twtysemi.com
PMV20XN 30 v, 4.8 a n-channel trench mosfet 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j =25c - 30 v v gs gate-source voltage -12 12 v i d drain current v gs =4.5v; t amb =25c [1] -4.8a v gs =4.5v; t amb =100c [1] -3a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 20 a p tot total power dissipation t amb =25c [2] - 510 mw [1] - 930 mw t sp = 25 c - 4170 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb =25c [1] -1a 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 . table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - 207 245 k/w [2] - 116 135 k/w r th(j-sp) thermal resistance from junction to solder point - 2030k/w product specification sales@twtysemi.com 3 of 4 http://www.twtysemi.com
PMV20XN 30 v, 4.8 a n-channel trench mosfet 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 30--v v gsth gate-source threshold voltage i d =250a; v ds =v gs ; t j = 25 c 0.5 1 1.5 v i dss drain leakage current v ds =30v; v gs =0v; t j =25c --1a v ds =30v; v gs =0v; t j =150c --20a i gss gate leakage current v gs =12v; v ds =0v; t j = 25 c - - 100 na v gs =-12v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =4.5v; i d = 4.8 a; t j = 25 c - 19 25 m ? v gs =4.5v; i d = 4.8 a; t j =150c - 3140m ? v gs =2.5v; i d =4a; t j = 25 c - 26 35 m ? g fs forward transconductance v ds =5v; i d =3a; t j =25c - 8 - s dynamic characteristics q g(tot) total gate charge i d =3a; v ds =15v; v gs =4.5v; t j =25c - 6.4 10 nc q gs gate-source charge - 1.8 - nc q gd gate-drain charge - 1.1 - nc c iss input capacitance v gs =0v; v ds =15v; f=1mhz; t j =25c - 585 - pf c oss output capacitance - 110 - pf c rss reverse transfer capacitance -55-pf t d(on) turn-on delay time v ds =15v; v gs =5.4v; r g(ext) =6 ? ; t j =25c; i d =4.8a -12-ns t r rise time - 27 - ns t d(off) turn-off delay time - 128 - ns t f fall time - 68 - ns source-drain diode v sd source-drain voltage i s =1a; v gs =0v; t j = 25 c - 0.75 1.2 v product specification sales@twtysemi.com 4 of 4 http://www.twtysemi.com
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